r07ds0869ej0100 rev.1.00 page 1 of 6 aug 28, 2012 data sheet pa2737gr p-channel mosfet ?30 v, ?11 a, 13 m description the pa2737gr is p-channel mos field effect transistor designed for dc/dc converter and power management applications of portable equipment. features ? v dss = ? 30 v (t a = 25 c) ? low on-state resistance ? r ds(on) = 13 m max. (v gs = ? 10 v, i d = ? 11 a) ? 4.5 v gate-drive available ? small and surface mount package (power sop8) ? pb-free and halogen free ordering information part no. lead plating packing package pa2737gr-e1-at pa2737gr-e2-at pure sn tape 2500 p/reel power sop8 0.08 g typ. absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) i d(dc) m 11 a drain current (pulse) ? 1 i d(pulse) m 110 a total power dissipation ? 2 p t1 1.1 w total power dissipation (pw = 10 sec) ? 2 p t2 2.5 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current ? 3 i as 11 a single avalanche energy ? 3 e as 12.1 mj thermal resistance channel to ambient thermal resistance ?2 r th(ch-a) 114 c/w notes: ? 1. pw 10 s, duty cycle 1% ? 2. mounted on a glass epoxy boar d of 25.4 mm x 25.4 mm x 0.8 mmt ? 3. starting t ch = 25 c, v dd = ? 15 v, r g = 25 , v gs = ? 20 0 v, l = 100 h r07ds0869ej0100 rev.1.00 aug 28, 2012 power sop8
pa2737gr r07ds0869ej0100 rev.1.00 page 2 of 6 aug 28, 2012 electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? 1 a v ds = ? 30 v, v gs = 0 v gate leakage current i gss m 100 na v gs = m 20 v, v ds = 0 v gate cut-off voltage v gs(off) ? 1.0 ? 2.5 v v ds = ? 10 v, i d = ? 1 ma forward transfer admittance ? 1 | y fs | 4.5 s v ds = ? 10 v, i d = ? 5.5 a r ds(on)1 9.7 13 m v gs = ? 10 v, i d = ? 11 a drain to source on-state resistance ? 1 r ds(on)2 17 25 m v gs = ? 4.5 v, i d = ? 11 a input capacitance c iss 1750 pf v ds = ? 10 v, output capacitance c oss 850 pf v gs = 0 v, reverse transfer capacitance c rss 770 pf f = 1 mhz turn-on delay time t d(on) 20 ns rise time t r 32 ns v dd = ? 15 v, i d = ? 5.5 a, v gs = ? 10 v, turn-off delay time t d(off) 70 ns r g = 10 fall time t f 55 ns total gate charge q g 45 nc v dd = ? 24 v, gate to source charge q gs 2.5 nc v gs = ? 10 v, gate to drain charge q gd 23 nc i d = ? 11 a body diode forward voltage ? 1 v f(s-d) 0.85 v i f = 11 a, v gs = 0 v reverse recovery time t rr 49 ns i f = 11 a, v gs = 0 v, reverse recovery charge q rr 48 nc di/dt = 100 a/ s note: ? 1. pulsed test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
pa2737gr r07ds0869ej0100 rev.1.00 page 3 of 6 aug 28, 2012 typical characteristics (t a = 25c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t a - ambient temperature - c i d - drain current - a -0.01 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 d c i d(pulse) = ?110 a i d(dc) = ?11 a p w = 1 0 0 s 1 m s 1 0 m s 100 ms 30 ms single pulse t a = 25 c mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt r d s ( o n ) l i m i t e d ( v g s = 1 0 v ) p o w e r d i s s i p a t i o n l i m i t e d 1 0 m s v ds - drain to source voltage ? v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 114 c/w r th(ch-a) mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt single pulse pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a -0 -20 -40 -60 -80 -100 -120 -0 -0.5 -1 -1.5 pu ls e d ?4.5 v v gs = ?10 v v ds - drain to source voltage - v i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -0 -1 -2 -3 -4 pulsed v ds = ?10 v t a = 150c 75c 25c ?55c v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
pa2737gr r07ds0869ej0100 rev.1.00 page 4 of 6 aug 28, 2012 gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) ? gate to source cut-off voltage - v -0 -1 -2 -3 -50 0 50 100 150 pulsed v ds = ?10 v i d = ?1ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 -0.01 -0.1 -1 -10 t a = 150 c 75 c 25 c ? 55 c pulsed v ds = ?10 v i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 -1 -10 -100 -1000 ?10 v v gs = ?4.5 v pulsed i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 30 -0 -5 -10 -15 -20 pulsed i d = ?11 a v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 -50 0 50 100 150 pulsed i d = ?11 a v gs = ?4.5 v v gs = ?10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1 mhz c rss c iss c oss v ds - drain to source voltage - v
pa2737gr r07ds0869ej0100 rev.1.00 page 5 of 6 aug 28, 2012 dynamic input/output characteristics source to drain diode forward voltage v ds - drain to source voltage - v -0 -5 -10 -15 -20 -25 0 1020304050 -0 -2 -4 -6 -8 -10 i d = ?11 a v gs v dd = ?24v ? 12v ? 6v v ds q g - gate charge - nc v gs - gate to source voltage - v i f - diode forward current - a 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 pulsed v gs = ?10 v 0 v ?4.5 v v f(s-d) - source to drain voltage - v
pa2737gr r07ds0869ej0100 rev.1.00 page 6 of 6 aug 28, 2012 package drawings (unit: mm) power sop8 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 ?0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 ?0.05 5.37 max. 0.10 14 85 1, 2, 3 : source 4 : gate 5, 6, 7, 8 : drain equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history pa2737gr data sheet description rev. date page summary 1.00 aug 28, 2012 ? first edition issued
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